Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
The structure and structural changes under the isothermal annealing of
 (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and
 X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has
 been revealed. The matrix of...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | Rubish, V.M., Stefanovich, V.O., Maryan, V.M., Mykaylo, O.A., Shtets, P.P., Kaynts, D.I., Yurkin, I.M. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118348 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ. |
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