Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induct...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2014
Hauptverfasser: Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118352
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals / R.V. Konakova, S.M. Red’ko, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 75-79. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118352
record_format dspace
spelling Konakova, R.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
2017-05-30T05:34:44Z
2017-05-30T05:34:44Z
2014
Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals / R.V. Konakova, S.M. Red’ko, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 75-79. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS 78.55.Cr, 71.55.Eq
https://nasplib.isofts.kiev.ua/handle/123456789/118352
The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
spellingShingle Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
Konakova, R.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
title_short Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
title_full Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
title_fullStr Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
title_full_unstemmed Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
title_sort effect of weak magnetic fields treatment on photoluminescence of iii-v single crystals
author Konakova, R.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
author_facet Konakova, R.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
publishDate 2014
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118352
citation_txt Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals / R.V. Konakova, S.M. Red’ko, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 75-79. — Бібліогр.: 18 назв. — англ.
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first_indexed 2025-12-07T15:47:09Z
last_indexed 2025-12-07T15:47:09Z
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