Analysis of features of recombination mechanisms in silicon solar cells
Investigated in this paper are theoretical and experimental spectral
 dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon
 solar cells. The authors have considered two constructions of solar cells. The first
 construction is a solar cell w...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118353 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Analysis of features of recombination mechanisms
 in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862716573983178752 |
|---|---|
| author | Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| author_facet | Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| citation_txt | Analysis of features of recombination mechanisms
 in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Investigated in this paper are theoretical and experimental spectral
dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon
solar cells. The authors have considered two constructions of solar cells. The first
construction is a solar cell with contacts on the front and back surfaces, and the second –
solar cells with back barriers and contact metallization. Analyzed in the work are spectral
dependences of the internal quantum efficiency for the short-circuit current and smallsignal
photo-e.m.f.
It has been shown that the short-wave drop of the short-circuit current is related with
recombination on deep centers at the front surface as well as inter-band Auger
recombination in the heavily doped emitter. At the same time, availability of the shortwave
drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate
of surface recombination Seff(l) due to diffusion inflow.
The latter takes place when a layer with the thickness dp and increased recombination is
available near illuminated surface. In this case, the mechanism providing decrease in the
small-signal photo-e.m.f. in the area of strong light absorption is related with increasing
the efficient rate of surface recombination near the front surface, when the dominant
amount of electro-hole pairs is generated in the layer with the increased recombination
rate. The same mechanism is responsible for the short-circuit current drop in solar cells
with back barriers and contact metallization.
Juxtaposition of theoretical and experimental results enabled to determine parameters
that characterize sub-surface properties of solar cells, namely: the thickness of the
surface layer with increased recombination, lifetime of carriers in it, and dependences
Seff(l).
|
| first_indexed | 2025-12-07T18:05:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118353 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:05:30Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. 2017-05-30T05:35:29Z 2017-05-30T05:35:29Z 2014 Analysis of features of recombination mechanisms
 in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 88.40.Jj https://nasplib.isofts.kiev.ua/handle/123456789/118353 Investigated in this paper are theoretical and experimental spectral
 dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon
 solar cells. The authors have considered two constructions of solar cells. The first
 construction is a solar cell with contacts on the front and back surfaces, and the second –
 solar cells with back barriers and contact metallization. Analyzed in the work are spectral
 dependences of the internal quantum efficiency for the short-circuit current and smallsignal
 photo-e.m.f.
 It has been shown that the short-wave drop of the short-circuit current is related with
 recombination on deep centers at the front surface as well as inter-band Auger
 recombination in the heavily doped emitter. At the same time, availability of the shortwave
 drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate
 of surface recombination Seff(l) due to diffusion inflow.
 The latter takes place when a layer with the thickness dp and increased recombination is
 available near illuminated surface. In this case, the mechanism providing decrease in the
 small-signal photo-e.m.f. in the area of strong light absorption is related with increasing
 the efficient rate of surface recombination near the front surface, when the dominant
 amount of electro-hole pairs is generated in the layer with the increased recombination
 rate. The same mechanism is responsible for the short-circuit current drop in solar cells
 with back barriers and contact metallization.
 Juxtaposition of theoretical and experimental results enabled to determine parameters
 that characterize sub-surface properties of solar cells, namely: the thickness of the
 surface layer with increased recombination, lifetime of carriers in it, and dependences
 Seff(l). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of features of recombination mechanisms in silicon solar cells Article published earlier |
| spellingShingle | Analysis of features of recombination mechanisms in silicon solar cells Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| title | Analysis of features of recombination mechanisms in silicon solar cells |
| title_full | Analysis of features of recombination mechanisms in silicon solar cells |
| title_fullStr | Analysis of features of recombination mechanisms in silicon solar cells |
| title_full_unstemmed | Analysis of features of recombination mechanisms in silicon solar cells |
| title_short | Analysis of features of recombination mechanisms in silicon solar cells |
| title_sort | analysis of features of recombination mechanisms in silicon solar cells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118353 |
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