Analysis of features of recombination mechanisms in silicon solar cells
Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of solar cells. The first construction is a solar cell with contacts on the fron...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118353 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Analysis of features of recombination mechanisms in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. 2017-05-30T05:35:29Z 2017-05-30T05:35:29Z 2014 Analysis of features of recombination mechanisms in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 88.40.Jj https://nasplib.isofts.kiev.ua/handle/123456789/118353 Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of solar cells. The first construction is a solar cell with contacts on the front and back surfaces, and the second – solar cells with back barriers and contact metallization. Analyzed in the work are spectral dependences of the internal quantum efficiency for the short-circuit current and smallsignal photo-e.m.f. It has been shown that the short-wave drop of the short-circuit current is related with recombination on deep centers at the front surface as well as inter-band Auger recombination in the heavily doped emitter. At the same time, availability of the shortwave drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate of surface recombination Seff(l) due to diffusion inflow. The latter takes place when a layer with the thickness dp and increased recombination is available near illuminated surface. In this case, the mechanism providing decrease in the small-signal photo-e.m.f. in the area of strong light absorption is related with increasing the efficient rate of surface recombination near the front surface, when the dominant amount of electro-hole pairs is generated in the layer with the increased recombination rate. The same mechanism is responsible for the short-circuit current drop in solar cells with back barriers and contact metallization. Juxtaposition of theoretical and experimental results enabled to determine parameters that characterize sub-surface properties of solar cells, namely: the thickness of the surface layer with increased recombination, lifetime of carriers in it, and dependences Seff(l). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of features of recombination mechanisms in silicon solar cells Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Analysis of features of recombination mechanisms in silicon solar cells |
| spellingShingle |
Analysis of features of recombination mechanisms in silicon solar cells Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| title_short |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_full |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_fullStr |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_full_unstemmed |
Analysis of features of recombination mechanisms in silicon solar cells |
| title_sort |
analysis of features of recombination mechanisms in silicon solar cells |
| author |
Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| author_facet |
Korkishko, R.M. Kostylyov, V.P. Prima, N.A. Sachenko, A.V. Serba, O.A. Slusar, T.V. Chernenko, V.V. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Investigated in this paper are theoretical and experimental spectral
dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon
solar cells. The authors have considered two constructions of solar cells. The first
construction is a solar cell with contacts on the front and back surfaces, and the second –
solar cells with back barriers and contact metallization. Analyzed in the work are spectral
dependences of the internal quantum efficiency for the short-circuit current and smallsignal
photo-e.m.f.
It has been shown that the short-wave drop of the short-circuit current is related with
recombination on deep centers at the front surface as well as inter-band Auger
recombination in the heavily doped emitter. At the same time, availability of the shortwave
drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate
of surface recombination Seff(l) due to diffusion inflow.
The latter takes place when a layer with the thickness dp and increased recombination is
available near illuminated surface. In this case, the mechanism providing decrease in the
small-signal photo-e.m.f. in the area of strong light absorption is related with increasing
the efficient rate of surface recombination near the front surface, when the dominant
amount of electro-hole pairs is generated in the layer with the increased recombination
rate. The same mechanism is responsible for the short-circuit current drop in solar cells
with back barriers and contact metallization.
Juxtaposition of theoretical and experimental results enabled to determine parameters
that characterize sub-surface properties of solar cells, namely: the thickness of the
surface layer with increased recombination, lifetime of carriers in it, and dependences
Seff(l).
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118353 |
| citation_txt |
Analysis of features of recombination mechanisms in silicon solar cells / R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 14-20. — Бібліогр.: 8 назв. — англ. |
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| first_indexed |
2025-12-07T18:05:30Z |
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2025-12-07T18:05:30Z |
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