Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions
The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid
 solutions under reproducible hydrodynamic conditions has been studied. The equal
 dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the
 semiconductor dissolution proce...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118354 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions / R.O. Denysyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 21-24. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid
solutions under reproducible hydrodynamic conditions has been studied. The equal
dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the
semiconductor dissolution process have been determined. Regions of polishing, selective
and unpolishing solutions in the mentioned system have been ascertained. The influence
of Mn concentrations in solid solutions on the etching rate and quality has been
established.
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| ISSN: | 1560-8034 |