Gaidar, G. (2014). Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)
Gaidar, G.P. "Investigation of the Influence of Isovalent Impurity of Silicon and Y-irradiation (⁶⁰Co) on Electrophysical Parameters of N-Ge
Gaidar, G.P. "Investigation of the Influence of Isovalent Impurity of Silicon and Y-irradiation (⁶⁰Co) on Electrophysical Parameters of N-Ge
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