Gaidar, G. (2014). Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) Citation
Gaidar, G.P. "Investigation of the Influence of Isovalent Impurity of Silicon and Y-irradiation (⁶⁰Co) on Electrophysical Parameters of N-Ge
Gaidar, G.P. "Investigation of the Influence of Isovalent Impurity of Silicon and Y-irradiation (⁶⁰Co) on Electrophysical Parameters of N-Ge
Warning: These citations may not always be 100% accurate.