APA (7th ed.) Citation

Gaidar, G. (2014). Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Gaidar, G.P. "Investigation of the Influence of Isovalent Impurity of Silicon and Y-irradiation (⁶⁰Co) on Electrophysical Parameters of N-Ge <Sb>." Semiconductor Physics Quantum Electronics &amp; Optoelectronics 2014.

MLA (8th ed.) Citation

Gaidar, G.P. "Investigation of the Influence of Isovalent Impurity of Silicon and Y-irradiation (⁶⁰Co) on Electrophysical Parameters of N-Ge <Sb>." Semiconductor Physics Quantum Electronics &amp; Optoelectronics, 2014.

Warning: These citations may not always be 100% accurate.