Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
The influence of isovalent impurity of Si on the kinetics of electron processes
 in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of
 predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity
 signifi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118355 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862533748936933376 |
|---|---|
| author | Gaidar, G.P. |
| author_facet | Gaidar, G.P. |
| citation_txt | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of isovalent impurity of Si on the kinetics of electron processes
in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of
predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity
significantly reduces the mobility of charge carriers and changes the sign of inequality
ne₃₀₀k / ne₇₇.₄k > 1 characteristic of n-Ge <Sb> single crystals to the opposite one. It has
found that in n-Ge <Sb> samples irradiated by y-rays (⁶⁰Co) with the dose 1.23*10⁸ R, the
charge carrier mobility has low radiation stability and decreases with increasing the
magnetic field, while remaining practically unchanged in the region of the intermediate
Н values.
|
| first_indexed | 2025-11-24T06:14:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118355 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T06:14:47Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. 2017-05-30T05:37:43Z 2017-05-30T05:37:43Z 2014 Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 61.82.Fk, 61.72.uf, 61.72.S-, 72.20.-i https://nasplib.isofts.kiev.ua/handle/123456789/118355 The influence of isovalent impurity of Si on the kinetics of electron processes
 in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of
 predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity
 significantly reduces the mobility of charge carriers and changes the sign of inequality
 ne₃₀₀k / ne₇₇.₄k > 1 characteristic of n-Ge <Sb> single crystals to the opposite one. It has
 found that in n-Ge <Sb> samples irradiated by y-rays (⁶⁰Co) with the dose 1.23*10⁸ R, the
 charge carrier mobility has low radiation stability and decreases with increasing the
 magnetic field, while remaining practically unchanged in the region of the intermediate
 Н values. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> Article published earlier |
| spellingShingle | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> Gaidar, G.P. |
| title | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> |
| title_full | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> |
| title_fullStr | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> |
| title_full_unstemmed | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> |
| title_short | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> |
| title_sort | investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰co) on electrophysical parameters of n-ge <sb> |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118355 |
| work_keys_str_mv | AT gaidargp investigationoftheinfluenceofisovalentimpurityofsiliconandyirradiation60coonelectrophysicalparametersofngeltsb |