Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• 1. Verfasser: Gaidar, G.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118355
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ.

The influence of isovalent impurity of Si on the kinetics of electron processes
 in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of
 predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity
 signifi...