Dislocation emission caused by different types of nanoscale deformation defects in CdTe
Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regi...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118357 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118357 |
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Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. 2017-05-30T05:40:07Z 2017-05-30T05:40:07Z 2014 Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.72.Lk, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/118357 Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dislocation emission caused by different types of nanoscale deformation defects in CdTe Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| spellingShingle |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| title_short |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_full |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_fullStr |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_full_unstemmed |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_sort |
dislocation emission caused by different types of nanoscale deformation defects in cdte |
| author |
Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| author_facet |
Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Dislocation-related defects induced by dislocation motion in p-CdTe were
studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
(110), and (111) surfaces at room temperatures was visualized by chemical etching and
low temperature photoluminescence in a mapping regime. The crystallographic
orientation of the dislocation rosettes of macroscopic plastic deformation lines was
analyzed on the (100), (110), and (111) surfaces.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118357 |
| citation_txt |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
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2025-12-01T23:44:09Z |
| last_indexed |
2025-12-01T23:44:09Z |
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