Dislocation emission caused by different types of nanoscale deformation defects in CdTe
Dislocation-related defects induced by dislocation motion in p-CdTe were
 studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
 (110), and (111) surfaces at room temperatures was visualized by chemical etching and
 low temperature photolumine...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118357 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dislocation emission caused by different types
 of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862653832704557056 |
|---|---|
| author | Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| author_facet | Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| citation_txt | Dislocation emission caused by different types
 of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Dislocation-related defects induced by dislocation motion in p-CdTe were
studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
(110), and (111) surfaces at room temperatures was visualized by chemical etching and
low temperature photoluminescence in a mapping regime. The crystallographic
orientation of the dislocation rosettes of macroscopic plastic deformation lines was
analyzed on the (100), (110), and (111) surfaces.
|
| first_indexed | 2025-12-01T23:44:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118357 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T23:44:09Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. 2017-05-30T05:40:07Z 2017-05-30T05:40:07Z 2014 Dislocation emission caused by different types
 of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.72.Lk, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/118357 Dislocation-related defects induced by dislocation motion in p-CdTe were
 studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
 (110), and (111) surfaces at room temperatures was visualized by chemical etching and
 low temperature photoluminescence in a mapping regime. The crystallographic
 orientation of the dislocation rosettes of macroscopic plastic deformation lines was
 analyzed on the (100), (110), and (111) surfaces. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dislocation emission caused by different types of nanoscale deformation defects in CdTe Article published earlier |
| spellingShingle | Dislocation emission caused by different types of nanoscale deformation defects in CdTe Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| title | Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_full | Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_fullStr | Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_full_unstemmed | Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_short | Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_sort | dislocation emission caused by different types of nanoscale deformation defects in cdte |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118357 |
| work_keys_str_mv | AT babentsovvn dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT boykova dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT gasanzadesg dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT shepelskiga dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT stariysv dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte |