Dislocation emission caused by different types of nanoscale deformation defects in CdTe

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Babentsov, V.N., Boyko, V.A., Gasan-zade, S.G., Shepelski, G.A., Stariy, S.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118357
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ.

Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regi...