Nanostructures in lightly doped silicon carbide crystals with polytypic defects

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118364
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Nanostructures in lightly doped silicon carbide crystals
 with polytypic defects / S.I. Vlaskina, G.N. Mishinova, L.V. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 155-159. — Бібліогр.: 23 назв. — англ.

In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown
 original defects are reported. Undoped SiC single crystals with the impurity
 concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ cm⁻³, and ND – NA ~
 (1…5)*10¹⁷ cm⁻³, ND = 10¹⁸ cm⁻...