Influence of complex defects on electrophysical properties of GaP light emitting diodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118369
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of complex defects on electrophysical properties
 of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ.

In order to estimate the role of complex defects on GaP light emitting diodes
 (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
 reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
 defects affect electroluminescence quenching. From the analysis of the tunnel current,
 the density of dislocations in the depleted part of the p–n junction was obtained. Neutron
 induced disorder regions do not change the tunnel component of the direct current of red
 diodes, increasing the dislocation density, because the carrier flow along the “tunnel
 shunts” is blocked.