Influence of complex defects on electrophysical properties of GaP light emitting diodes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118369
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of complex defects on electrophysical properties
 of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ.

In order to estimate the role of complex defects on GaP light emitting diodes
 (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
 reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
 defects affect...