Influence of pulse magnetic fields treatment on optical properties of GaAs based films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118370
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of pulse magnetic fields treatment
 on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ.

Long-term transformations of the optical reflectance of GaAs epitaxial
 structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
 5 min) have been obtained. Optical measurements were performed within the wavelength
 range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed.
 Experimental results have been interpreted in terms of diffusion of point defects,
 resulting from destruction of metastable complexes (probably [VAs+impurity]), from the
 internal boundaries to the surfaces of the investigated structures. The method for
 detection of non-equilibrium complexes in multilayer objects has been proposed.