Influence of pulse magnetic fields treatment on optical properties of GaAs based films
Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of re...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118370 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of pulse magnetic fields treatment on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Long-term transformations of the optical reflectance of GaAs epitaxial
structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
5 min) have been obtained. Optical measurements were performed within the wavelength
range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed.
Experimental results have been interpreted in terms of diffusion of point defects,
resulting from destruction of metastable complexes (probably [VAs+impurity]), from the
internal boundaries to the surfaces of the investigated structures. The method for
detection of non-equilibrium complexes in multilayer objects has been proposed.
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| ISSN: | 1560-8034 |