Influence of pulse magnetic fields treatment on optical properties of GaAs based films

Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of re...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2014
Hauptverfasser: Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118370
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Influence of pulse magnetic fields treatment on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118370
record_format dspace
spelling Konakova, R.V.
Sosnova, M.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
2017-05-30T06:02:53Z
2017-05-30T06:02:53Z
2014
Influence of pulse magnetic fields treatment on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 42.25.Gy, 42.25.Hz
https://nasplib.isofts.kiev.ua/handle/123456789/118370
Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [VAs+impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of pulse magnetic fields treatment on optical properties of GaAs based films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of pulse magnetic fields treatment on optical properties of GaAs based films
spellingShingle Influence of pulse magnetic fields treatment on optical properties of GaAs based films
Konakova, R.V.
Sosnova, M.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
title_short Influence of pulse magnetic fields treatment on optical properties of GaAs based films
title_full Influence of pulse magnetic fields treatment on optical properties of GaAs based films
title_fullStr Influence of pulse magnetic fields treatment on optical properties of GaAs based films
title_full_unstemmed Influence of pulse magnetic fields treatment on optical properties of GaAs based films
title_sort influence of pulse magnetic fields treatment on optical properties of gaas based films
author Konakova, R.V.
Sosnova, M.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
author_facet Konakova, R.V.
Sosnova, M.V.
Red’ko, S.M.
Milenin, V.V.
Red’ko, R.A.
publishDate 2014
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [VAs+impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118370
citation_txt Influence of pulse magnetic fields treatment on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ.
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AT redkosm influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms
AT mileninvv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms
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first_indexed 2025-12-07T18:34:48Z
last_indexed 2025-12-07T18:34:48Z
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