Influence of pulse magnetic fields treatment on optical properties of GaAs based films
Long-term transformations of the optical reflectance of GaAs epitaxial
 structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
 5 min) have been obtained. Optical measurements were performed within the wavelength
 range 800…1100 nm at 300 K. Non-...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118370 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of pulse magnetic fields treatment
 on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862722179759603712 |
|---|---|
| author | Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. |
| author_facet | Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. |
| citation_txt | Influence of pulse magnetic fields treatment
 on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Long-term transformations of the optical reflectance of GaAs epitaxial
structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
5 min) have been obtained. Optical measurements were performed within the wavelength
range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed.
Experimental results have been interpreted in terms of diffusion of point defects,
resulting from destruction of metastable complexes (probably [VAs+impurity]), from the
internal boundaries to the surfaces of the investigated structures. The method for
detection of non-equilibrium complexes in multilayer objects has been proposed.
|
| first_indexed | 2025-12-07T18:34:48Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118370 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:34:48Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. 2017-05-30T06:02:53Z 2017-05-30T06:02:53Z 2014 Influence of pulse magnetic fields treatment
 on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 42.25.Gy, 42.25.Hz https://nasplib.isofts.kiev.ua/handle/123456789/118370 Long-term transformations of the optical reflectance of GaAs epitaxial
 structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
 5 min) have been obtained. Optical measurements were performed within the wavelength
 range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed.
 Experimental results have been interpreted in terms of diffusion of point defects,
 resulting from destruction of metastable complexes (probably [VAs+impurity]), from the
 internal boundaries to the surfaces of the investigated structures. The method for
 detection of non-equilibrium complexes in multilayer objects has been proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of pulse magnetic fields treatment on optical properties of GaAs based films Article published earlier |
| spellingShingle | Influence of pulse magnetic fields treatment on optical properties of GaAs based films Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. |
| title | Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_full | Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_fullStr | Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_full_unstemmed | Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_short | Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_sort | influence of pulse magnetic fields treatment on optical properties of gaas based films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118370 |
| work_keys_str_mv | AT konakovarv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT sosnovamv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT redkosm influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT mileninvv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT redkora influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms |