Influence of pulse magnetic fields treatment on optical properties of GaAs based films
Long-term transformations of the optical reflectance of GaAs epitaxial
 structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
 5 min) have been obtained. Optical measurements were performed within the wavelength
 range 800…1100 nm at 300 K. Non-...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118370 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of pulse magnetic fields treatment
 on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
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