Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor
Represented in this paper is the method and results of theoretical
 investigations aimed at the influence of spatial confinement effects, self-polarization of
 heterojunction planes as well as exciton-phonon interaction on the position and shape of
 the band corresponding to...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118372 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Temperature changes in the function of the shape inherent
 to the band of exciton absorption in nanofilm
 of layered semiconductor / A.V. Derevyanchuk, O.V. Pugantseva, V.M. Kramar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 188-192. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730380399869952 |
|---|---|
| author | Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. |
| author_facet | Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. |
| citation_txt | Temperature changes in the function of the shape inherent
 to the band of exciton absorption in nanofilm
 of layered semiconductor / A.V. Derevyanchuk, O.V. Pugantseva, V.M. Kramar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 188-192. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Represented in this paper is the method and results of theoretical
investigations aimed at the influence of spatial confinement effects, self-polarization of
heterojunction planes as well as exciton-phonon interaction on the position and shape of
the band corresponding to exciton absorption in nanofilms of layered semiconductor in a
dielectric matrix. The heterojunction is considered as unloaded, the nanosystem is
modeled by an infinitely deep quantum well and characterized by an essential difference
between dielectric permittivities on both sides of the heterojunction. Calculated in this
work are the dependences for the form-function of the absorption band on the thickness
of lead iodide nanofilm embedded into polymer E-MAA or glass, and on its temperature.
The results of calculations are in good accordance with known data of experimental
measurements.
|
| first_indexed | 2025-12-07T19:20:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118372 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:20:35Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. 2017-05-30T06:04:06Z 2017-05-30T06:04:06Z 2014 Temperature changes in the function of the shape inherent
 to the band of exciton absorption in nanofilm
 of layered semiconductor / A.V. Derevyanchuk, O.V. Pugantseva, V.M. Kramar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 188-192. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 73.21.Fg https://nasplib.isofts.kiev.ua/handle/123456789/118372 Represented in this paper is the method and results of theoretical
 investigations aimed at the influence of spatial confinement effects, self-polarization of
 heterojunction planes as well as exciton-phonon interaction on the position and shape of
 the band corresponding to exciton absorption in nanofilms of layered semiconductor in a
 dielectric matrix. The heterojunction is considered as unloaded, the nanosystem is
 modeled by an infinitely deep quantum well and characterized by an essential difference
 between dielectric permittivities on both sides of the heterojunction. Calculated in this
 work are the dependences for the form-function of the absorption band on the thickness
 of lead iodide nanofilm embedded into polymer E-MAA or glass, and on its temperature.
 The results of calculations are in good accordance with known data of experimental
 measurements. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor Article published earlier |
| spellingShingle | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. |
| title | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_full | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_fullStr | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_full_unstemmed | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_short | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_sort | temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118372 |
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