Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
The experimental data on Raman scattering (RS) and optical absorption in
 structures with thin silicon layers on various substrates, as well as in multilayer
 quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
 shown that laser annealing on...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118373 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Variation of optical parameters of multilayer structures
 with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862529930071375872 |
|---|---|
| author | Okhrimenko, O.B. |
| author_facet | Okhrimenko, O.B. |
| citation_txt | Variation of optical parameters of multilayer structures
 with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The experimental data on Raman scattering (RS) and optical absorption in
structures with thin silicon layers on various substrates, as well as in multilayer
quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
shown that laser annealing on the above structures leads to changes in spectra of RS and
optical transmission that can be explained within the critical action model. The value of
critical action of laser radiation is determined for the structures studied.
|
| first_indexed | 2025-11-24T02:23:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118373 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:23:01Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Okhrimenko, O.B. 2017-05-30T06:05:25Z 2017-05-30T06:05:25Z 2014 Variation of optical parameters of multilayer structures
 with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 71.20.Nr, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/118373 The experimental data on Raman scattering (RS) and optical absorption in
 structures with thin silicon layers on various substrates, as well as in multilayer
 quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
 shown that laser annealing on the above structures leads to changes in spectra of RS and
 optical transmission that can be explained within the critical action model. The value of
 critical action of laser radiation is determined for the structures studied. The author is indebted to Dr. Sci. Prof. V.P. Kladko and
 Dr. Sci. V.V. Strelchuk for their interest in this work and
 valuable discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing Article published earlier |
| spellingShingle | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing Okhrimenko, O.B. |
| title | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_full | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_fullStr | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_full_unstemmed | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_short | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_sort | variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118373 |
| work_keys_str_mv | AT okhrimenkoob variationofopticalparametersofmultilayerstructureswiththinsiliconlayersatlaserannealing |