Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
The experimental data on Raman scattering (RS) and optical absorption in
 structures with thin silicon layers on various substrates, as well as in multilayer
 quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
 shown that laser annealing on...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118373 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Variation of optical parameters of multilayer structures
 with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. |