Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• 1. Verfasser: Okhrimenko, O.B.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118373
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Variation of optical parameters of multilayer structures
 with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ.

The experimental data on Raman scattering (RS) and optical absorption in
 structures with thin silicon layers on various substrates, as well as in multilayer
 quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
 shown that laser annealing on...