Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Melezhik, E.O., Gumenjuk-Sichevska, J.V., Dvoretskii, S.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118376
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Intrinsic concentration dependences in the HgCdTe quantum well
 in the range of the insulator-semimetal topological transition / E.O. Melezhik, J.V. Gumenjuk-Sichevska, S.A. Dvoretskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 179-183. — Бібліогр.: 7 назв. — англ.

The band structure and dependences of the intrinsic concentration in the
 mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum
 wells in the framework of the 8x8 k.p envelope function method on the well width L and
 composition x were calculated. Modeling of the energy spectra showed that the intrinsic
 concentration can vary about an order of magnitude with variation of the well width and
 chemical composition in the range of x < 0.16 and well width L < 20 nm at the liquid
 nitrogen temperature. These strong variations of the carrier concentration are caused by
 the insulator-semimetal topological transition.