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Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition

The band structure and dependences of the intrinsic concentration in the
 mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum
 wells in the framework of the 8x8 k.p envelope function method on the well width L and
 composition x were calculated. M...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2014
Main Authors: Melezhik, E.O., Gumenjuk-Sichevska, J.V., Dvoretskii, S.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118376
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Intrinsic concentration dependences in the HgCdTe quantum well
 in the range of the insulator-semimetal topological transition / E.O. Melezhik, J.V. Gumenjuk-Sichevska, S.A. Dvoretskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 179-183. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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