Hybrid-integrated version of solid-state components for terahertz frequency region
We present the results of development of key components for THz devices obtained using mathematical modeling of detector sections, radiation source and subharmonic mixers. Schottky barrier diodes with different parameters served as nonlinear elements of the above facilities.
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118387 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Hybrid-integrated version of solid-state components for terahertz frequency region / O.V. Zorenko, A.V. Bychok, T.V. Kryts'ka, Ya.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 193-199. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We present the results of development of key components for THz devices
obtained using mathematical modeling of detector sections, radiation source and
subharmonic mixers. Schottky barrier diodes with different parameters served as
nonlinear elements of the above facilities.
|
|---|---|
| ISSN: | 1560-8034 |