Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
 nitride with single quantum wells has been theoretically investigated in the framework of
 the compact-density-matrix approach. The confined wave functions and energies of
 electrons in GaN/AlxGa₁...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118393 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862599422628593664 |
|---|---|
| author | Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. |
| author_facet | Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. |
| citation_txt | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
nitride with single quantum wells has been theoretically investigated in the framework of
the compact-density-matrix approach. The confined wave functions and energies of
electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation,
solving the Schrödinger equation by Numerov’s method using the second and fourth
order approximations for the derivatives. The numerical results for typical
GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in
electric field by choosing some optimized structural parameters.
|
| first_indexed | 2025-11-27T21:18:54Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118393 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T21:18:54Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. 2017-05-30T06:50:48Z 2017-05-30T06:50:48Z 2010 Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 42.65.Ky, 85.60.-q, 07.05.Tp https://nasplib.isofts.kiev.ua/handle/123456789/118393 he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
 nitride with single quantum wells has been theoretically investigated in the framework of
 the compact-density-matrix approach. The confined wave functions and energies of
 electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation,
 solving the Schrödinger equation by Numerov’s method using the second and fourth
 order approximations for the derivatives. The numerical results for typical
 GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in
 electric field by choosing some optimized structural parameters. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch Article published earlier |
| spellingShingle | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. |
| title | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_full | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_fullStr | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_full_unstemmed | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_short | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_sort | electro-optic effect in gan/al₀.₁₅ga₀.₈₅n single quantum wells for optical switch |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118393 |
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