Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Elkadadra, A., Abouelaoualim, D., Oueriagli, A., Outzourhit, A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118393
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ.

he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
 nitride with single quantum wells has been theoretically investigated in the framework of
 the compact-density-matrix approach. The confined wave functions and energies of
 electrons in GaN/AlxGa₁...