Relaxation process features of photoconductivity in p-i-n structures
We studied the relaxation processes of photoconductivity in Si(Li) p-i-n
 structures. It has been shown that a clearly pronounced “well” is observed in time
 dependences of the photovoltage pulse after photoexcitation of these structures. Our
 experimental data are indicative...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118398 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Relaxation process features of photoconductivity
 in p-i-n structures / R.A. Mumimov, Sh.K. Kanyazov, A.K. Saymbetov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 259-261. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862719450060423168 |
|---|---|
| author | Mumimov, R.A. Kanyazov, Sh.K. Saymbetov, A.K. |
| author_facet | Mumimov, R.A. Kanyazov, Sh.K. Saymbetov, A.K. |
| citation_txt | Relaxation process features of photoconductivity
 in p-i-n structures / R.A. Mumimov, Sh.K. Kanyazov, A.K. Saymbetov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 259-261. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We studied the relaxation processes of photoconductivity in Si(Li) p-i-n
structures. It has been shown that a clearly pronounced “well” is observed in time
dependences of the photovoltage pulse after photoexcitation of these structures. Our
experimental data are indicative of abnormal relaxation of photoconductivity in silicon pi-n
diodes.
|
| first_indexed | 2025-12-07T18:20:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118398 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:20:09Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mumimov, R.A. Kanyazov, Sh.K. Saymbetov, A.K. 2017-05-30T06:54:09Z 2017-05-30T06:54:09Z 2010 Relaxation process features of photoconductivity
 in p-i-n structures / R.A. Mumimov, Sh.K. Kanyazov, A.K. Saymbetov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 259-261. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.20.Lc, 74.62.Dh https://nasplib.isofts.kiev.ua/handle/123456789/118398 We studied the relaxation processes of photoconductivity in Si(Li) p-i-n
 structures. It has been shown that a clearly pronounced “well” is observed in time
 dependences of the photovoltage pulse after photoexcitation of these structures. Our
 experimental data are indicative of abnormal relaxation of photoconductivity in silicon pi-n
 diodes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Relaxation process features of photoconductivity in p-i-n structures Article published earlier |
| spellingShingle | Relaxation process features of photoconductivity in p-i-n structures Mumimov, R.A. Kanyazov, Sh.K. Saymbetov, A.K. |
| title | Relaxation process features of photoconductivity in p-i-n structures |
| title_full | Relaxation process features of photoconductivity in p-i-n structures |
| title_fullStr | Relaxation process features of photoconductivity in p-i-n structures |
| title_full_unstemmed | Relaxation process features of photoconductivity in p-i-n structures |
| title_short | Relaxation process features of photoconductivity in p-i-n structures |
| title_sort | relaxation process features of photoconductivity in p-i-n structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118398 |
| work_keys_str_mv | AT mumimovra relaxationprocessfeaturesofphotoconductivityinpinstructures AT kanyazovshk relaxationprocessfeaturesofphotoconductivityinpinstructures AT saymbetovak relaxationprocessfeaturesofphotoconductivityinpinstructures |