Relaxation process features of photoconductivity in p-i-n structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Mumimov, R.A., Kanyazov, Sh.K., Saymbetov, A.K.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118398
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Relaxation process features of photoconductivity
 in p-i-n structures / R.A. Mumimov, Sh.K. Kanyazov, A.K. Saymbetov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 259-261. — Бібліогр.: 12 назв. — англ.

We studied the relaxation processes of photoconductivity in Si(Li) p-i-n
 structures. It has been shown that a clearly pronounced “well” is observed in time
 dependences of the photovoltage pulse after photoexcitation of these structures. Our
 experimental data are indicative...