Acoustic-emission method for controlling the defect-formation process in light-emitting structures
Сomplex researches of light-emitting structures based on А₃В₅ compounds
 have been carried out. It has been shown that at current loading exceeding the acousticemission
 threshold, there arises a change in the electroluminescence intensity, fluctuation
 of current and light....
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118399 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Acoustic-emission method for controlling the defect-formation
 process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862633653839855616 |
|---|---|
| author | Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. |
| author_facet | Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. |
| citation_txt | Acoustic-emission method for controlling the defect-formation
 process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Сomplex researches of light-emitting structures based on А₃В₅ compounds
have been carried out. It has been shown that at current loading exceeding the acousticemission
threshold, there arises a change in the electroluminescence intensity, fluctuation
of current and light. It has been ascertained that natural ageing leads to a general
improvement of some practically important parameters of light-emitting structures, in
particular to increase of maximal admissible currents and reliability.
|
| first_indexed | 2025-11-30T14:41:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118399 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T14:41:23Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. 2017-05-30T06:54:41Z 2017-05-30T06:54:41Z 2010 Acoustic-emission method for controlling the defect-formation
 process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 43.35.+d, 43.50.+y, 72.70.+m, 73.50.TD, 78.60.Fi, 78.66.Fd https://nasplib.isofts.kiev.ua/handle/123456789/118399 Сomplex researches of light-emitting structures based on А₃В₅ compounds
 have been carried out. It has been shown that at current loading exceeding the acousticemission
 threshold, there arises a change in the electroluminescence intensity, fluctuation
 of current and light. It has been ascertained that natural ageing leads to a general
 improvement of some practically important parameters of light-emitting structures, in
 particular to increase of maximal admissible currents and reliability. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Acoustic-emission method for controlling the defect-formation process in light-emitting structures Article published earlier |
| spellingShingle | Acoustic-emission method for controlling the defect-formation process in light-emitting structures Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. |
| title | Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_full | Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_fullStr | Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_full_unstemmed | Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_short | Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_sort | acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118399 |
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