Acoustic-emission method for controlling the defect-formation process in light-emitting structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Lyashenko, O.V., Vlasenko, A.I., Veleschuk, V.P., Kisseluk, M.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118399
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Acoustic-emission method for controlling the defect-formation process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ.

Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence intensity, fluctuation of current and light. It has been ascertained...