Acoustic-emission method for controlling the defect-formation process in light-emitting structures
Сomplex researches of light-emitting structures based on А₃В₅ compounds
 have been carried out. It has been shown that at current loading exceeding the acousticemission
 threshold, there arises a change in the electroluminescence intensity, fluctuation
 of current and light....
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | Lyashenko, O.V., Vlasenko, A.I., Veleschuk, V.P., Kisseluk, M.P. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118399 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Acoustic-emission method for controlling the defect-formation
 process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. |
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