Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution
It has been suggested the technique based on analysis of geometry and
 intensity distribution profiles in Kikuchi patterns obtained due to electron backscattering
 diffraction for defining structural imperfection of diamond crystals. To determine the
 geometry parameters in K...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118400 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Determination of structural homogeneity of synthetic diamonds
 from analysis of Kikuchi lines intensity distribution / I. Fodchuk, S. Balovsyak, M. Borcha, Ya. Garabazhiv, V. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 262-267. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | It has been suggested the technique based on analysis of geometry and
intensity distribution profiles in Kikuchi patterns obtained due to electron backscattering
diffraction for defining structural imperfection of diamond crystals. To determine the
geometry parameters in Kikuchi patterns with the maximal precision, the special
software was developed. It has been shown that application of electron diffraction
(Kikuchi method) allows to obtain information about degree of perfection and
homogeneity of real structure for diamond crystals synthesized with various methods.
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| ISSN: | 1560-8034 |