Defect reorganization induced by pulsed magnetic field in porous InP
We present results of investigations of the effect caused by weak magnetic
 field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was
 found when studying the spectra of radiative recombination within the range 0.6 to
 2.0 µm at 77 K. It was obt...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2010 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118402 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Defect reorganization induced by pulsed magnetic field
 in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We present results of investigations of the effect caused by weak magnetic
field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was
found when studying the spectra of radiative recombination within the range 0.6 to
2.0 µm at 77 K. It was obtained that field influence initiates long-term changes in the
intensity of radiative recombination inherent to centers of different nature. A possible
mechanism of observed transformation is discussed.
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| ISSN: | 1560-8034 |