Defect reorganization induced by pulsed magnetic field in porous InP
We present results of investigations of the effect caused by weak magnetic
 field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was
 found when studying the spectra of radiative recombination within the range 0.6 to
 2.0 µm at 77 K. It was obt...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2010 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118402 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Defect reorganization induced by pulsed magnetic field
 in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ. |