Defect reorganization induced by pulsed magnetic field in porous InP

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Milenin, V.V., Red’ko, R.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118402
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Defect reorganization induced by pulsed magnetic field in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ.

We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination within the range 0.6 to 2.0 µm at 77 K. It was obtained that field influen...