Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells

• Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• ISSN: 1560-8034
• Автор: Chernenko, V.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118403
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Peculiarities of the influence of high- and low-energy proton and
 electron irradiations on the characteristics of silicon solar cells /V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 273-275. — Бібліогр.: 10 назв. — англ.

Experimental data on degradation of photovoltaic and photoenergetic
 characteristics of silicon solar cells exposed by high-energy electrons and protons as well
 as low-energy protons have been obtained. The previously proposed theoretical model
 that can describe degradation of the solar cell characteristics under the influence of
 irradiation, including that creating spatially inhomogeneous defect distribution over the
 structure thickness, has been experimentally confirmed. It was ascertained that in the
 cases of 1 MeV energy electron and 20 MeV energy proton irradiations, when there is a
 relatively homogeneous defect distribution over the silicon solar cell thickness, its shortcircuit
 current degrades faster than the open-circuit voltage. On the contrary, in the case
 of low-energy 0.1 MeV proton irradiation, when the distribution of defects is spatially
 inhomogeneous, the open-circuit voltage degrades faster than the short-circuit current.