Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells
Experimental data on degradation of photovoltaic and photoenergetic
 characteristics of silicon solar cells exposed by high-energy electrons and protons as well
 as low-energy protons have been obtained. The previously proposed theoretical model
 that can describe degradation...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118403 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Peculiarities of the influence of high- and low-energy proton and
 electron irradiations on the characteristics of silicon solar cells /V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 273-275. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862611503405858816 |
|---|---|
| author | Chernenko, V.V. |
| author_facet | Chernenko, V.V. |
| citation_txt | Peculiarities of the influence of high- and low-energy proton and
 electron irradiations on the characteristics of silicon solar cells /V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 273-275. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Experimental data on degradation of photovoltaic and photoenergetic
characteristics of silicon solar cells exposed by high-energy electrons and protons as well
as low-energy protons have been obtained. The previously proposed theoretical model
that can describe degradation of the solar cell characteristics under the influence of
irradiation, including that creating spatially inhomogeneous defect distribution over the
structure thickness, has been experimentally confirmed. It was ascertained that in the
cases of 1 MeV energy electron and 20 MeV energy proton irradiations, when there is a
relatively homogeneous defect distribution over the silicon solar cell thickness, its shortcircuit
current degrades faster than the open-circuit voltage. On the contrary, in the case
of low-energy 0.1 MeV proton irradiation, when the distribution of defects is spatially
inhomogeneous, the open-circuit voltage degrades faster than the short-circuit current.
|
| first_indexed | 2025-11-29T01:29:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118403 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T01:29:16Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Chernenko, V.V. 2017-05-30T06:59:36Z 2017-05-30T06:59:36Z 2010 Peculiarities of the influence of high- and low-energy proton and
 electron irradiations on the characteristics of silicon solar cells /V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 273-275. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 88.40.jj https://nasplib.isofts.kiev.ua/handle/123456789/118403 Experimental data on degradation of photovoltaic and photoenergetic
 characteristics of silicon solar cells exposed by high-energy electrons and protons as well
 as low-energy protons have been obtained. The previously proposed theoretical model
 that can describe degradation of the solar cell characteristics under the influence of
 irradiation, including that creating spatially inhomogeneous defect distribution over the
 structure thickness, has been experimentally confirmed. It was ascertained that in the
 cases of 1 MeV energy electron and 20 MeV energy proton irradiations, when there is a
 relatively homogeneous defect distribution over the silicon solar cell thickness, its shortcircuit
 current degrades faster than the open-circuit voltage. On the contrary, in the case
 of low-energy 0.1 MeV proton irradiation, when the distribution of defects is spatially
 inhomogeneous, the open-circuit voltage degrades faster than the short-circuit current. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells Article published earlier |
| spellingShingle | Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells Chernenko, V.V. |
| title | Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells |
| title_full | Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells |
| title_fullStr | Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells |
| title_full_unstemmed | Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells |
| title_short | Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells |
| title_sort | peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118403 |
| work_keys_str_mv | AT chernenkovv peculiaritiesoftheinfluenceofhighandlowenergyprotonandelectronirradiationsonthecharacteristicsofsiliconsolarcells |