Optical properties and structure of As-Ge-Se thin films

Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimat...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2010
Hauptverfasser: Tolmachov, I.D., Stronski, A.V., Vlcek, M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118404
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118404
record_format dspace
spelling Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
2017-05-30T07:00:17Z
2017-05-30T07:00:17Z
2010
Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.
1560-8034
PACS 42.70.Mp, 64.75.St, 78.66.-w
https://nasplib.isofts.kiev.ua/handle/123456789/118404
Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical properties and structure of As-Ge-Se thin films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Optical properties and structure of As-Ge-Se thin films
spellingShingle Optical properties and structure of As-Ge-Se thin films
Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
title_short Optical properties and structure of As-Ge-Se thin films
title_full Optical properties and structure of As-Ge-Se thin films
title_fullStr Optical properties and structure of As-Ge-Se thin films
title_full_unstemmed Optical properties and structure of As-Ge-Se thin films
title_sort optical properties and structure of as-ge-se thin films
author Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
author_facet Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
publishDate 2010
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118404
fulltext
citation_txt Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.
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