Optical properties and structure of As-Ge-Se thin films

Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅
 have been investigated. Optical constants and thicknesses of these films were obtained
 from transmission spectra. Structure of initial bulk glasses and films were investigated by
 Raman spectroscopy...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2010
Hauptverfasser: Tolmachov, I.D., Stronski, A.V., Vlcek, M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118404
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Zitieren:Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
author_facet Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
citation_txt Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅
 have been investigated. Optical constants and thicknesses of these films were obtained
 from transmission spectra. Structure of initial bulk glasses and films were investigated by
 Raman spectroscopy. Both films are estimated to have high values of the nonlinear
 refractive index.
first_indexed 2025-11-24T14:45:54Z
format Article
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id nasplib_isofts_kiev_ua-123456789-118404
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-24T14:45:54Z
publishDate 2010
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
2017-05-30T07:00:17Z
2017-05-30T07:00:17Z
2010
Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.
1560-8034
PACS 42.70.Mp, 64.75.St, 78.66.-w
https://nasplib.isofts.kiev.ua/handle/123456789/118404
Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅
 have been investigated. Optical constants and thicknesses of these films were obtained
 from transmission spectra. Structure of initial bulk glasses and films were investigated by
 Raman spectroscopy. Both films are estimated to have high values of the nonlinear
 refractive index.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical properties and structure of As-Ge-Se thin films
Article
published earlier
spellingShingle Optical properties and structure of As-Ge-Se thin films
Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
title Optical properties and structure of As-Ge-Se thin films
title_full Optical properties and structure of As-Ge-Se thin films
title_fullStr Optical properties and structure of As-Ge-Se thin films
title_full_unstemmed Optical properties and structure of As-Ge-Se thin films
title_short Optical properties and structure of As-Ge-Se thin films
title_sort optical properties and structure of as-ge-se thin films
url https://nasplib.isofts.kiev.ua/handle/123456789/118404
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AT stronskiav opticalpropertiesandstructureofasgesethinfilms
AT vlcekm opticalpropertiesandstructureofasgesethinfilms