Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL b...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118413 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ. |
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Michailovska, K.V. Indutnyi, I.Z. Shepeliavyi, P.E. Dan’ko, V.A. 2017-05-30T10:18:13Z 2017-05-30T10:18:13Z 2014 Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 78.67.Bf, 78.55.Ap https://nasplib.isofts.kiev.ua/handle/123456789/118413 The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiOx/Ni/Si samples is essentially higher than that in reference SiOx/Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiOx/Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8.2*10⁴ s⁻¹ for SiOx/Si specimens to 2.86*10⁴ s⁻¹ for SiOx/Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiOx/Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures |
| spellingShingle |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures Michailovska, K.V. Indutnyi, I.Z. Shepeliavyi, P.E. Dan’ko, V.A. |
| title_short |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures |
| title_full |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures |
| title_fullStr |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures |
| title_full_unstemmed |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures |
| title_sort |
nickel-induced enhancement of photoluminescence in nc-si–siox nanostructures |
| author |
Michailovska, K.V. Indutnyi, I.Z. Shepeliavyi, P.E. Dan’ko, V.A. |
| author_facet |
Michailovska, K.V. Indutnyi, I.Z. Shepeliavyi, P.E. Dan’ko, V.A. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiOx/Ni/Si samples is essentially higher than that in reference SiOx/Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiOx/Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8.2*10⁴ s⁻¹ for SiOx/Si specimens to 2.86*10⁴ s⁻¹ for SiOx/Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiOx/Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118413 |
| citation_txt |
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ. |
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AT michailovskakv nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures AT indutnyiiz nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures AT shepeliavyipe nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures AT dankova nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures |
| first_indexed |
2025-11-29T09:11:19Z |
| last_indexed |
2025-11-29T09:11:19Z |
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1850854705575493632 |