Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• ISSN: 1560-8034
• Hauptverfasser: Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118414
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Deformation state of short-period AlGaN/GaN superlattices
 at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ.

Dependence of deformation characteristics changing in superlattice (SL)
 structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period
 was studied in this work. The deformation state of SL and individual layers, relaxation
 level and periods, layers’ thickness and composition of AlxGa₁₋xN layers were analyzed
 using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and
 SL layers are compressed in all the investigated structures. Thus, it has been shown that
 deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of
 individual layers in SL strongly depend on the deformation state of the whole system.
 Increasing the deformation level leads to the increase of the barrier layer thickness.