Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
Dependence of deformation characteristics changing in superlattice (SL)
 structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period
 was studied in this work. The deformation state of SL and individual layers, relaxation
 level and periods, layers’...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118414 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Deformation state of short-period AlGaN/GaN superlattices
 at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862575681350664192 |
|---|---|
| author | Kladko, V.P. Safriuk, N.V. Stanchu, H.V. Kuchuk, A.V. Melnyk, V.P. Oberemok, A.S. Kriviy, S.B. Maksymenko, Z.V. Belyaev, A.E. Yavich, B.S. |
| author_facet | Kladko, V.P. Safriuk, N.V. Stanchu, H.V. Kuchuk, A.V. Melnyk, V.P. Oberemok, A.S. Kriviy, S.B. Maksymenko, Z.V. Belyaev, A.E. Yavich, B.S. |
| citation_txt | Deformation state of short-period AlGaN/GaN superlattices
 at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Dependence of deformation characteristics changing in superlattice (SL)
structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period
was studied in this work. The deformation state of SL and individual layers, relaxation
level and periods, layers’ thickness and composition of AlxGa₁₋xN layers were analyzed
using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and
SL layers are compressed in all the investigated structures. Thus, it has been shown that
deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of
individual layers in SL strongly depend on the deformation state of the whole system.
Increasing the deformation level leads to the increase of the barrier layer thickness.
|
| first_indexed | 2025-11-26T13:11:17Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118414 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T13:11:17Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kladko, V.P. Safriuk, N.V. Stanchu, H.V. Kuchuk, A.V. Melnyk, V.P. Oberemok, A.S. Kriviy, S.B. Maksymenko, Z.V. Belyaev, A.E. Yavich, B.S. 2017-05-30T10:19:20Z 2017-05-30T10:19:20Z 2014 Deformation state of short-period AlGaN/GaN superlattices
 at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.05.cp, 64.75.Nx, 78.55.-m, 78.67.Hc, 78.55.Cr, 78.67.De, 81.07.St https://nasplib.isofts.kiev.ua/handle/123456789/118414 Dependence of deformation characteristics changing in superlattice (SL)
 structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period
 was studied in this work. The deformation state of SL and individual layers, relaxation
 level and periods, layers’ thickness and composition of AlxGa₁₋xN layers were analyzed
 using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and
 SL layers are compressed in all the investigated structures. Thus, it has been shown that
 deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of
 individual layers in SL strongly depend on the deformation state of the whole system.
 Increasing the deformation level leads to the increase of the barrier layer thickness. This study was supported by the National Academy
 of Sciences of Ukraine within the framework of the
 scientific-technological programs “Nanotechnology and
 Nanomaterials” №3.5.1.12 and №3.5.1.30. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios Article published earlier |
| spellingShingle | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios Kladko, V.P. Safriuk, N.V. Stanchu, H.V. Kuchuk, A.V. Melnyk, V.P. Oberemok, A.S. Kriviy, S.B. Maksymenko, Z.V. Belyaev, A.E. Yavich, B.S. |
| title | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios |
| title_full | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios |
| title_fullStr | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios |
| title_full_unstemmed | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios |
| title_short | Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios |
| title_sort | deformation state of short-period algan/gan superlattices at different well-barrier thickness ratios |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118414 |
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