Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Klochko, N.P., Klepikova, K.S., Khrypunov, G.S., Pirohov, O.V., Novikov, V.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118415
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Nanoscale tin dioxide films and zinc oxide hierarchical
 nanostructures for gas sensing applications / N.P. Klochko, K.S. Klepikova, G.S. Khrypunov, O.V. Pirohov, V.A. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 358-367. — Бібліогр.: 16 назв. — англ.

Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as
 promising candidates for preparation of sensing elements for metal oxide semiconductor
 gas sensors. Tin dioxide films deposited by direct current magnetron sputtering are
 investigated. The influence of deposition temperature and annealing on the structure and
 electrical properties of the tin dioxide films are considered. The development of design
 and technological solution of active layer with high gas sensitivity, reproducibility and
 stability is offered. Studies of effects of the pulse electrodeposition regimes on structural
 and substructural parameters and on morphology of zinc oxide arrays made it possible to
 identify modes that are optimal for formation of hierarchical nanostructures with large
 specific surface area suitable for gas sensing applications.