Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications
Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as
 promising candidates for preparation of sensing elements for metal oxide semiconductor
 gas sensors. Tin dioxide films deposited by direct current magnetron sputtering are
 investigated. The influence...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118415 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Nanoscale tin dioxide films and zinc oxide hierarchical
 nanostructures for gas sensing applications / N.P. Klochko, K.S. Klepikova, G.S. Khrypunov, O.V. Pirohov, V.A. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 358-367. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862653836634619904 |
|---|---|
| author | Klochko, N.P. Klepikova, K.S. Khrypunov, G.S. Pirohov, O.V. Novikov, V.A. |
| author_facet | Klochko, N.P. Klepikova, K.S. Khrypunov, G.S. Pirohov, O.V. Novikov, V.A. |
| citation_txt | Nanoscale tin dioxide films and zinc oxide hierarchical
 nanostructures for gas sensing applications / N.P. Klochko, K.S. Klepikova, G.S. Khrypunov, O.V. Pirohov, V.A. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 358-367. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as
promising candidates for preparation of sensing elements for metal oxide semiconductor
gas sensors. Tin dioxide films deposited by direct current magnetron sputtering are
investigated. The influence of deposition temperature and annealing on the structure and
electrical properties of the tin dioxide films are considered. The development of design
and technological solution of active layer with high gas sensitivity, reproducibility and
stability is offered. Studies of effects of the pulse electrodeposition regimes on structural
and substructural parameters and on morphology of zinc oxide arrays made it possible to
identify modes that are optimal for formation of hierarchical nanostructures with large
specific surface area suitable for gas sensing applications.
|
| first_indexed | 2025-12-01T23:44:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118415 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T23:44:16Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Klochko, N.P. Klepikova, K.S. Khrypunov, G.S. Pirohov, O.V. Novikov, V.A. 2017-05-30T10:20:30Z 2017-05-30T10:20:30Z 2014 Nanoscale tin dioxide films and zinc oxide hierarchical
 nanostructures for gas sensing applications / N.P. Klochko, K.S. Klepikova, G.S. Khrypunov, O.V. Pirohov, V.A. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 358-367. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 81.40.-z https://nasplib.isofts.kiev.ua/handle/123456789/118415 Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as
 promising candidates for preparation of sensing elements for metal oxide semiconductor
 gas sensors. Tin dioxide films deposited by direct current magnetron sputtering are
 investigated. The influence of deposition temperature and annealing on the structure and
 electrical properties of the tin dioxide films are considered. The development of design
 and technological solution of active layer with high gas sensitivity, reproducibility and
 stability is offered. Studies of effects of the pulse electrodeposition regimes on structural
 and substructural parameters and on morphology of zinc oxide arrays made it possible to
 identify modes that are optimal for formation of hierarchical nanostructures with large
 specific surface area suitable for gas sensing applications. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications Article published earlier |
| spellingShingle | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications Klochko, N.P. Klepikova, K.S. Khrypunov, G.S. Pirohov, O.V. Novikov, V.A. |
| title | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications |
| title_full | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications |
| title_fullStr | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications |
| title_full_unstemmed | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications |
| title_short | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications |
| title_sort | nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118415 |
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