Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications
Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as promising candidates for preparation of sensing elements for metal oxide semiconductor gas sensors. Tin dioxide films deposited by direct current magnetron sputtering are investigated. The influence of deposition temperatu...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118415 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications / N.P. Klochko, K.S. Klepikova, G.S. Khrypunov, O.V. Pirohov, V.A. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 358-367. — Бібліогр.: 16 назв. — англ. |