Carrier transport mechanisms in InSb diffusion p-n junctions
The linearly-graded p-n junctions were prepared by diffusion of cadmium into
 n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
 temperature T = 77 K. Passivation and protection of mesa structures have been carried
 out using thin films of CdTe. F...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118416 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862530545394647040 |
|---|---|
| author | Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. |
| author_facet | Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. |
| citation_txt | Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The linearly-graded p-n junctions were prepared by diffusion of cadmium into
n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
temperature T = 77 K. Passivation and protection of mesa structures have been carried
out using thin films of CdTe. Forward and reverse current-voltage characteristics were
investigated within the temperature range 77…156 K. It has been found that the total
dark current consists of generation-recombination and tunneling current components,
which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures,
respectively. Experimental results have been explained using the model of a
nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction
with the rather thick (~1 m) depletion region tunneling current flows through the states
related to dislocations in the depletion region. The performed estimation of electrical
parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based
photodiodes at operation temperatures T > 77 K.
|
| first_indexed | 2025-11-24T02:23:07Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118416 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:23:07Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. 2017-05-30T10:21:08Z 2017-05-30T10:21:08Z 2014 Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 73.40.Kp, 73.40.Gk https://nasplib.isofts.kiev.ua/handle/123456789/118416 The linearly-graded p-n junctions were prepared by diffusion of cadmium into
 n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
 temperature T = 77 K. Passivation and protection of mesa structures have been carried
 out using thin films of CdTe. Forward and reverse current-voltage characteristics were
 investigated within the temperature range 77…156 K. It has been found that the total
 dark current consists of generation-recombination and tunneling current components,
 which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures,
 respectively. Experimental results have been explained using the model of a
 nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction
 with the rather thick (~1 m) depletion region tunneling current flows through the states
 related to dislocations in the depletion region. The performed estimation of electrical
 parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based
 photodiodes at operation temperatures T > 77 K. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Carrier transport mechanisms in InSb diffusion p-n junctions Article published earlier |
| spellingShingle | Carrier transport mechanisms in InSb diffusion p-n junctions Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. |
| title | Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_full | Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_fullStr | Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_full_unstemmed | Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_short | Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_sort | carrier transport mechanisms in insb diffusion p-n junctions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118416 |
| work_keys_str_mv | AT sukacha carriertransportmechanismsininsbdiffusionpnjunctions AT tetyorkinv carriertransportmechanismsininsbdiffusionpnjunctions AT voroschenkoa carriertransportmechanismsininsbdiffusionpnjunctions AT tkachuka carriertransportmechanismsininsbdiffusionpnjunctions AT kravetskiim carriertransportmechanismsininsbdiffusionpnjunctions AT lucyshyni carriertransportmechanismsininsbdiffusionpnjunctions |