Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118419
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Peculiarities of phase transformations in SiC crystals and thin films
 with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ.

Phase transformations of SiC crystals and thin films with in-grown original
 defects have been studied. The analysis of absorption, excitation and low-temperature
 photoluminescence spectra testifies to formation of new micro-phases during the growth.
 The complex spectra can be decomposed into similar structure-constituting spectra
 shifted against each other on the energy scale. These spectra are indicative of formation
 of new nanophases. Taking into account the position of the short-wave edge in the zerophonon
 part of the SF-i spectra as well as the position of corresponding excitation spectra
 and placing them on the well-known linear dependence of the exciton gap (Egx) on the
 percentage of hexagonally in different polytypic structures, one can obtain a hint to the
 percentage of hexagonally in the new metastable structures appearing in the 6H (33)
 matrix or in the growth process. The SF spectra are indicative of the appearance of these
 metastable structures.