Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
Phase transformations of SiC crystals and thin films with in-grown original
 defects have been studied. The analysis of absorption, excitation and low-temperature
 photoluminescence spectra testifies to formation of new micro-phases during the growth.
 The complex spectra can...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118419 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of phase transformations in SiC crystals and thin films
 with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862667697230184448 |
|---|---|
| author | Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| author_facet | Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| citation_txt | Peculiarities of phase transformations in SiC crystals and thin films
 with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Phase transformations of SiC crystals and thin films with in-grown original
defects have been studied. The analysis of absorption, excitation and low-temperature
photoluminescence spectra testifies to formation of new micro-phases during the growth.
The complex spectra can be decomposed into similar structure-constituting spectra
shifted against each other on the energy scale. These spectra are indicative of formation
of new nanophases. Taking into account the position of the short-wave edge in the zerophonon
part of the SF-i spectra as well as the position of corresponding excitation spectra
and placing them on the well-known linear dependence of the exciton gap (Egx) on the
percentage of hexagonally in different polytypic structures, one can obtain a hint to the
percentage of hexagonally in the new metastable structures appearing in the 6H (33)
matrix or in the growth process. The SF spectra are indicative of the appearance of these
metastable structures.
|
| first_indexed | 2025-12-07T15:23:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118419 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:23:11Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. 2017-05-30T10:23:43Z 2017-05-30T10:23:43Z 2014 Peculiarities of phase transformations in SiC crystals and thin films
 with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 64.70.K-, 78.60.Lc, 81.30.-t https://nasplib.isofts.kiev.ua/handle/123456789/118419 Phase transformations of SiC crystals and thin films with in-grown original
 defects have been studied. The analysis of absorption, excitation and low-temperature
 photoluminescence spectra testifies to formation of new micro-phases during the growth.
 The complex spectra can be decomposed into similar structure-constituting spectra
 shifted against each other on the energy scale. These spectra are indicative of formation
 of new nanophases. Taking into account the position of the short-wave edge in the zerophonon
 part of the SF-i spectra as well as the position of corresponding excitation spectra
 and placing them on the well-known linear dependence of the exciton gap (Egx) on the
 percentage of hexagonally in different polytypic structures, one can obtain a hint to the
 percentage of hexagonally in the new metastable structures appearing in the 6H (33)
 matrix or in the growth process. The SF spectra are indicative of the appearance of these
 metastable structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects Article published earlier |
| spellingShingle | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| title | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_full | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_fullStr | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_full_unstemmed | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_short | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_sort | peculiarities of phase transformations in sic crystals and thin films with in-grown original defects |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118419 |
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