Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into simi...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118419 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118419 |
|---|---|
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dspace |
| spelling |
Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. 2017-05-30T10:23:43Z 2017-05-30T10:23:43Z 2014 Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 64.70.K-, 78.60.Lc, 81.30.-t https://nasplib.isofts.kiev.ua/handle/123456789/118419 Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into similar structure-constituting spectra shifted against each other on the energy scale. These spectra are indicative of formation of new nanophases. Taking into account the position of the short-wave edge in the zerophonon part of the SF-i spectra as well as the position of corresponding excitation spectra and placing them on the well-known linear dependence of the exciton gap (Egx) on the percentage of hexagonally in different polytypic structures, one can obtain a hint to the percentage of hexagonally in the new metastable structures appearing in the 6H (33) matrix or in the growth process. The SF spectra are indicative of the appearance of these metastable structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| spellingShingle |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| title_short |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_full |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_fullStr |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_full_unstemmed |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_sort |
peculiarities of phase transformations in sic crystals and thin films with in-grown original defects |
| author |
Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Phase transformations of SiC crystals and thin films with in-grown original
defects have been studied. The analysis of absorption, excitation and low-temperature
photoluminescence spectra testifies to formation of new micro-phases during the growth.
The complex spectra can be decomposed into similar structure-constituting spectra
shifted against each other on the energy scale. These spectra are indicative of formation
of new nanophases. Taking into account the position of the short-wave edge in the zerophonon
part of the SF-i spectra as well as the position of corresponding excitation spectra
and placing them on the well-known linear dependence of the exciton gap (Egx) on the
percentage of hexagonally in different polytypic structures, one can obtain a hint to the
percentage of hexagonally in the new metastable structures appearing in the 6H (33)
matrix or in the growth process. The SF spectra are indicative of the appearance of these
metastable structures.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118419 |
| citation_txt |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
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2025-12-07T15:23:11Z |
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2025-12-07T15:23:11Z |
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