Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into simi...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2014
Автори: Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118419
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118419
record_format dspace
spelling Vlaskina, S.I.
Mishinova, G.N.
Rodionov, V.E.
Svechnikov, G.S.
2017-05-30T10:23:43Z
2017-05-30T10:23:43Z
2014
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS 64.70.K-, 78.60.Lc, 81.30.-t
https://nasplib.isofts.kiev.ua/handle/123456789/118419
Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into similar structure-constituting spectra shifted against each other on the energy scale. These spectra are indicative of formation of new nanophases. Taking into account the position of the short-wave edge in the zerophonon part of the SF-i spectra as well as the position of corresponding excitation spectra and placing them on the well-known linear dependence of the exciton gap (Egx) on the percentage of hexagonally in different polytypic structures, one can obtain a hint to the percentage of hexagonally in the new metastable structures appearing in the 6H (33) matrix or in the growth process. The SF spectra are indicative of the appearance of these metastable structures.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
spellingShingle Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
Vlaskina, S.I.
Mishinova, G.N.
Rodionov, V.E.
Svechnikov, G.S.
title_short Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
title_full Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
title_fullStr Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
title_full_unstemmed Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
title_sort peculiarities of phase transformations in sic crystals and thin films with in-grown original defects
author Vlaskina, S.I.
Mishinova, G.N.
Rodionov, V.E.
Svechnikov, G.S.
author_facet Vlaskina, S.I.
Mishinova, G.N.
Rodionov, V.E.
Svechnikov, G.S.
publishDate 2014
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into similar structure-constituting spectra shifted against each other on the energy scale. These spectra are indicative of formation of new nanophases. Taking into account the position of the short-wave edge in the zerophonon part of the SF-i spectra as well as the position of corresponding excitation spectra and placing them on the well-known linear dependence of the exciton gap (Egx) on the percentage of hexagonally in different polytypic structures, one can obtain a hint to the percentage of hexagonally in the new metastable structures appearing in the 6H (33) matrix or in the growth process. The SF spectra are indicative of the appearance of these metastable structures.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118419
citation_txt Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ.
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AT mishinovagn peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects
AT rodionovve peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects
AT svechnikovgs peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects
first_indexed 2025-12-07T15:23:11Z
last_indexed 2025-12-07T15:23:11Z
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