Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Kudryk, Ya.Ya., Shynkarenko, V.V., Slipokurov, V.S., Bigun, R.I., Kudryk, R.Ya.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118424
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ.

We present the results of investigation of the barrier height and ideality factor
 in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the
 current-voltage and capacitance-voltage characteristics. Improving the accuracy of the
 methods that take into account the effect of the series resistance in calculating the ideality
 factor and barrier height has been shown with the Cheung method and direct
 approximation one. It has been ascertained that an inconsistency between real currentvoltage
 characteristics and its model – the temperature dependence of the barrier height,
 the ideality factor dependence on the voltage – introduces the basic error into the
 calculated parameters in the diode under study.