Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics
We present the results of investigation of the barrier height and ideality factor
 in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the
 current-voltage and capacitance-voltage characteristics. Improving the accuracy of the
 methods that take into acc...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118424 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862734606202044416 |
|---|---|
| author | Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. |
| author_facet | Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. |
| citation_txt | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We present the results of investigation of the barrier height and ideality factor
in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the
current-voltage and capacitance-voltage characteristics. Improving the accuracy of the
methods that take into account the effect of the series resistance in calculating the ideality
factor and barrier height has been shown with the Cheung method and direct
approximation one. It has been ascertained that an inconsistency between real currentvoltage
characteristics and its model – the temperature dependence of the barrier height,
the ideality factor dependence on the voltage – introduces the basic error into the
calculated parameters in the diode under study.
|
| first_indexed | 2025-12-07T19:44:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118424 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:44:01Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. 2017-05-30T10:29:33Z 2017-05-30T10:29:33Z 2014 Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 73.23.+y, 73.40.-c, 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/118424 We present the results of investigation of the barrier height and ideality factor
 in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the
 current-voltage and capacitance-voltage characteristics. Improving the accuracy of the
 methods that take into account the effect of the series resistance in calculating the ideality
 factor and barrier height has been shown with the Cheung method and direct
 approximation one. It has been ascertained that an inconsistency between real currentvoltage
 characteristics and its model – the temperature dependence of the barrier height,
 the ideality factor dependence on the voltage – introduces the basic error into the
 calculated parameters in the diode under study. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics Article published earlier |
| spellingShingle | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. |
| title | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_fullStr | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full_unstemmed | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_short | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_sort | determination of the schottky barrier height in diodes based on au–tib₂–n-sic 6h from the current-voltage and capacitance-voltage characteristics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118424 |
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