Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Kudryk, Ya.Ya., Shynkarenko, V.V., Slipokurov, V.S., Bigun, R.I., Kudryk, R.Ya.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118424
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ.

We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the s...