High-speed optical recording in vitreous chalcogenide thin films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E., Kostyukevych, K.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118425
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: High-speed optical recording in vitreous chalcogenide thin films / A.A. Kryuchyn, V.V. Petrov, V.M. Rubish, A.S. Lapchuk, S.O. Kostyukevych, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 389-393. — Бібліогр.: 11 назв. — англ.

Thin films of glassy chalcogenide semiconductor are widely used as recording
 media in optical data storage. To obtain relief micro- and nanoscale structures on the
 surface of optical master discs inorganic photoresists based on chalcogenide glassy
 semiconductors can be used. They have high resolution and allow for exposure by short
 laser pulses. Implementation of such exposure is promoted by increasing the speed of
 photostructural transformations at high powers of exposing radiation. This increase in the
 sensitivity is associated with both local heating by illumination and a high density of
 excited electron-hole pairs. The exposure mode of the inorganic photoresists based on
 glassy chalcogenide semiconductor pulses of 10⁻⁸-10⁻⁹ s is close to the threshold of local
 photothermal destruction. Significant impact on the value of the threshold of
 photothermal destruction effects the choice of the substrate material which determines
 the rate of heat removal from the irradiation area. Moreover, one also needs to consider
 the effect of pulsed annealing of the inorganic photoresist material on the process of
 selective etching. We have established an inversion of the selective etching of the
 inorganic negative photoresist based on As₂S₃ in the center of the irradiated zone. The
 diameter of this zone is about 20% of the diameter of exposing beam.
 After the selective etching in alkaline solution in the center of protrusions being
 formed on the substrate, there observed are some dimples with the depth of 30-50 nm.
 Prior to the processing of irradiated inorganic photoresist by the selective etching these
 dimples were absent and their appearance is not due to possible local material
 evaporation of the inorganic photoresist. A possible reason for the inversion of solubility
 of the inorganic photoresist could be pulsed annealing in the recording process.