Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• 1. Verfasser: Sheremet, V.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118426
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Metrological aspects of researching the specific contact resistivity
 of ohmic contacts by using the four-contact method / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 394-397. — Бібліогр.: 8 назв. — англ.

In this paper, we have considered the four-contact method for measurements
 of the specific contact resistivity of the ohmic contacts (ρc). The presented method for
 measuring ρc has been compared with several other methods. Limits of applying this
 method have been shown.