Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Lepikh, Ya.I., Ivanchenko, I.A., Budiyanskaya, L.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118429
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ.

The possibility to create uncooled photodetector (PD) in the region close to
 l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually
 and practically confirmed. Design and technology of uncooled thin-film PD based on
 Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-band CdSe layer is located on
 the illuminated surface and plays the role of the optical filter with respect to the lower
 layer of ternary compound. The PD spectral characteristics at room temperature have
 been researched, which confirms the photoactivity of both heterojunction layers. The
 mechanism of current flow in the PD structure based on the above heterojunction and
 the mechanism of the PD samples sensitivity at room temperature in the far infrared
 spectrum, the determining factor of which is the amount of wide-gap semiconductors
 where space charge-limited current appears, have been investigated. The uncooled PD
 detectability typical for polycrystalline structures 106
 …107 сm*Hz¹/²/W has been
 discovered.